Band offsets, dielectric dispersion and some applications of CdSe/GeO2 heterojunctions

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dc.authoridAtef Fayez Qasrawi / 0000-0001-8193-6975en_US
dc.authorscopusidAtef Fayez Qasrawi / 6603962677
dc.authorwosidAtef Fayez Qasrawi / R-4409-2019
dc.contributor.authorKhusayfan, Najla M.
dc.contributor.authorQasrawi, Atef Fayez
dc.contributor.authorAlharbi, S. R.
dc.contributor.authorKhanfar, Hazem K.
dc.contributor.authorKayed, T. S.
dc.date.accessioned2021-03-04T13:37:53Z
dc.date.available2021-03-04T13:37:53Z
dc.date.issued2021en_US
dc.departmentİstinye Üniversitesi, Mühendislik ve Doğa Bilimleri Fakültesi, Elektrik-Elektronik Bölümüen_US
dc.description.abstractHerein, the formation, structural, morphological, compositional, optical, dielectric, photoelectrical and electrical properties of the CdSe/GeO2 heterojunctions are explored. While the surface displayed formation of deficient GeO, the bulk of the films exhibited correct stoichiometry of GeO2 and CdSe. It is found that stacking of GeO2 onto CdSe enhances the crystallinity of CdSe by reducing the defects concentrations. It blue shifts the energy band gap of CdSe from 1.74 eV to 2.60 eV. The stacked layers of CdSe/GeO2 displayed conduction and valence band offsets of 2.34 eV and 1.23 eV, respectively. In addition, the Drude-Lorentz model analyses have shown that the coating of GeO2 onto CdSe, highly increases the drift mobility of charge carriers and tunes the plasmon frequency making it more appropriate for optoelectronic device applications. When exposed to light irradiation, an illumination intensity dependent photosensitivity is observed. The photoconduction mechanism is governed by the sublinear recombination with exponential trap distribution. Moreover, the capacitance –voltage characteristics of the device revealed metal-oxide-semiconductor field effect transistors (MOSFET) characteristics. The built in potential for this device under reverse biasing conditions reached 4.74 eV.en_US
dc.identifier.citationKhusayfan, N. M., Qasrawi, A. F., Alharbi, S. R., Khanfar, H. K., & Kayed, T. S. (2021). Band offsets, dielectric dispersion and Some applications of CdSe/GeO2 heterojunctions. Optik, 166506.en_US
dc.identifier.doi10.1016/j.ijleo.2021.166506en_US
dc.identifier.issn0030-4026en_US
dc.identifier.scopus2-s2.0-85101408042en_US
dc.identifier.scopusqualityQ2en_US
dc.identifier.urihttps://doi.org/10.1016/j.ijleo.2021.166506
dc.identifier.urihttps://hdl.handle.net/20.500.12713/1514
dc.identifier.volume231en_US
dc.identifier.wosWOS:000628707900003en_US
dc.identifier.wosqualityQ2en_US
dc.indekslendigikaynakWeb of Scienceen_US
dc.indekslendigikaynakScopusen_US
dc.institutionauthorQasrawi, Atef Fayez
dc.language.isoenen_US
dc.publisherElsevier GmbHen_US
dc.relation.ispartofOptiken_US
dc.relation.publicationcategoryMakale - Uluslararası Hakemli Dergi - Kurum Öğretim Elemanıen_US
dc.rightsinfo:eu-repo/semantics/closedAccessen_US
dc.subjectBand Offsetsen_US
dc.subjectCdSe/GeO2en_US
dc.subjectDielectricen_US
dc.subjectMOSFETen_US
dc.subjectPhotoconductivityen_US
dc.subjectXPSen_US
dc.titleBand offsets, dielectric dispersion and some applications of CdSe/GeO2 heterojunctionsen_US
dc.typeArticleen_US

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