ZnPc based multifunctional devices designed as fast capacitors, rectifiers, infrared detectors and microwave resonators adequate for 6 G technology applications

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dc.authoridQasrawi, A. F./0000-0001-8193-6975
dc.contributor.authorQasrawi, A. F.
dc.contributor.authorDaragme, Rana B.
dc.date.accessioned2024-05-19T14:46:02Z
dc.date.available2024-05-19T14:46:02Z
dc.date.issued2024
dc.departmentİstinye Üniversitesien_US
dc.description.abstractHerein Zinc phthalocyanine (ZnPc) based multifunctional devices are fabricated and characterized. The device fabrication included formation of an Au nanosheets onto n-Si wafers and coating these nanosheets with 500 nm thick ZnPc layer. Silver and platinum were used to form a Schottky and an ohmic contacts with n-Si and ZnPc, respectively. The device hybrid structure (Ag/n-Si/Au/p-ZnPc/Pt; abbreviated as ASZ) is composed of Ag/n-Si Schottky arm and p- and n- layers forming pn junction separated by Au nanosheets. Electrical and photoelectrical measurements on the ASZ devices have shown their ability to perform as conventional metal-oxide-semiconductor capacitors (CMOS). These CMOS devices showed light and frequency controlled charge accumulation, depletion and inversion mechanisms within the range of 1.0-50 MHz. The flat band and threshold voltages of the ASZ capacitors are engineered by the imposed ac signal frequency and by infrared (IR) light. In addition, ASZ devices performed as biasing controlled IR photosensors and as current rectifiers. A rectification ratio of 103, IR light sensitivity of 39, specific detectivity of .96 x 10 9 Jones and current responsivity exceeding 9.0 mA W-1 are recorded at biasing voltage of 4.5 V. Moreover ASZ devices displayed microwave resonator characteristics presented by negative capacitance effect, resonance -antiresonance phenomena and high microwave cutoff frequency. The latter is larger than 10 GHz nominating the device for 6 G technology applications.en_US
dc.description.sponsorshipArab American University; Arab American University, Palestine; Istinye University, Istanbul, Turkeyen_US
dc.description.sponsorshipThis work was supported by the Arab American University, Palestine and by Istinye University, Istanbul, Turkey. Therefore, the authors thank the Universities for its technical and financial support.en_US
dc.identifier.doi10.1088/1402-4896/ad36f8
dc.identifier.issn0031-8949
dc.identifier.issn1402-4896
dc.identifier.issue5en_US
dc.identifier.scopus2-s2.0-85189862894en_US
dc.identifier.scopusqualityQ2en_US
dc.identifier.urihttps://doi.org10.1088/1402-4896/ad36f8
dc.identifier.urihttps://hdl.handle.net/20.500.12713/5426
dc.identifier.volume99en_US
dc.identifier.wosWOS:001196668000001en_US
dc.identifier.wosqualityN/Aen_US
dc.indekslendigikaynakWeb of Scienceen_US
dc.indekslendigikaynakScopusen_US
dc.language.isoenen_US
dc.publisherIop Publishing Ltden_US
dc.relation.ispartofPhysica Scriptaen_US
dc.relation.publicationcategoryMakale - Uluslararası Hakemli Dergi - Kurum Öğretim Elemanıen_US
dc.rightsinfo:eu-repo/semantics/closedAccessen_US
dc.snmz20240519_kaen_US
dc.subjectN-Si/Au/P-Znpcen_US
dc.subjectCmosen_US
dc.subjectIr Sensoren_US
dc.subjectRectifieren_US
dc.subject6 G Technologyen_US
dc.titleZnPc based multifunctional devices designed as fast capacitors, rectifiers, infrared detectors and microwave resonators adequate for 6 G technology applicationsen_US
dc.typeArticleen_US

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