Optical and electrical dynamics at the In/CuSe interfaces

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dc.authoridAtef Fayez Qasrawi / 0000-0001-8193-6975en_US
dc.authorscopusidAtef Fayez Qasrawi / 6603962677
dc.authorwosidAtef Fayez Qasrawi / R-4409-2019
dc.contributor.authorQasrawi, Atef Fayez
dc.contributor.authorGhannam, Arwa N.Abu
dc.date.accessioned2021-12-21T14:01:14Z
dc.date.available2021-12-21T14:01:14Z
dc.date.issued2022en_US
dc.departmentİstinye Üniversitesi, Mühendislik ve Doğa Bilimleri Fakültesi, Elektrik-Elektronik Bölümüen_US
dc.description.abstractHerein, thin films of copper selenide are coated onto glass and 150 nm thick transparent indium substrates. The effect of indium substrates on the structural, morphological, compositional, optical, dielectric and electrical properties of CuSe are explored. Replacement of glass by indium, increased the crystallite and grain sizes, decreased the micro-strains, the stacking faults, the stress and the defect densities. Remarkable change in the shape of grains from wire like to rectangular shaped is forced by indium. Indium substrates also caused shrinkage in the energy band gap, enhanced the light absorbability and increased the dielectric constant values. The Drude-Lorentz analyses on the dielectric spectra have shown that the replacement of glass by indium increases the optical conductivity, increases the scattering time constant at femtosecond level and widens the range of plasma frequencies. On the other hand, dynamical electrical measurements which were carried out for In/CuSe/In devices, reveal the ability of using CuSe active media for fabrication of negative capacitance thin film transistors. Hopping conduction of charged particles over correlated barriers of height of 0.26 eV is dominant in the In/CuSe/In devices. The impedance spectroscopy analyses have shown that CuSe films can be used as bandstop filter appropriate for 5 G technologies.en_US
dc.identifier.citationQasrawi, A. F., & Ghannam , Arwa N.Abu (2022).Optical and electrical dynamics at the In/CuSe interfaces. 252.en_US
dc.identifier.doi10.1016/j.ijleo.2021.168505en_US
dc.identifier.scopus2-s2.0-85121470299en_US
dc.identifier.scopusqualityN/Aen_US
dc.identifier.urihttps://doi.org/10.1016/j.ijleo.2021.168505
dc.identifier.urihttps://hdl.handle.net/20.500.12713/2334
dc.identifier.volume252en_US
dc.identifier.wosWOS:000797488600002en_US
dc.identifier.wosqualityQ2en_US
dc.indekslendigikaynakWeb of Scienceen_US
dc.indekslendigikaynakScopusen_US
dc.institutionauthorQasrawi, Atef Fayez
dc.language.isoenen_US
dc.publisherElsevieren_US
dc.relation.ispartofOptiken_US
dc.relation.publicationcategoryMakale - Uluslararası Hakemli Dergi - Kurum Öğretim Elemanıen_US
dc.rightsinfo:eu-repo/semantics/closedAccessen_US
dc.subjectIn/CuSe Interfacesen_US
dc.subjectThin Film Transistoren_US
dc.subjectOptical Conductionsen_US
dc.subjectMicrowave Resonatorsen_US
dc.titleOptical and electrical dynamics at the In/CuSe interfacesen_US
dc.typeArticleen_US

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