Band offsets, dielectric dispersion, optical conduction and impedance spectroscopy analyses of WO3/ Ga2S3 heterojunctions

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dc.authoridAtef Fayez Qasrawi / 0000-0001-8193-6975en_US
dc.authorscopusidAtef Fayez Qasrawi / 6603962677
dc.authorwosidAtef Fayez Qasrawi / R-4409-2019en_US
dc.contributor.authorQasrawi, Atef Fayez
dc.contributor.authorAbu Alrub, Shatha N.
dc.date.accessioned2022-09-09T09:36:36Z
dc.date.available2022-09-09T09:36:36Z
dc.date.issued2022en_US
dc.departmentİstinye Üniversitesi, Mühendislik ve Doğa Bilimleri Fakültesi, Elektrik-Elektronik Bölümüen_US
dc.description.abstractStacked layers of amorphous WO3 and Ga2S3 are fabricated by the thermal evaporation technique under a vacuum pressure of 10– 5 mbar. The structural, compositional, optical, dielectric and electrical properties of the WO3/ Ga2S3 (WG) heterojunctions are investigated. It is observed that the WG heterojunctions exhibit well-aligned conduction bands. The valance band offsets are 0.58 eV. In addition, as a dielectric resonator, WG interfaces displayed single infrared oscillator, double ultraviolet (UV) oscillators and triple visible light oscillators. The optical conductivity modeling by the Drude–Lorentz approach has shown that for these oscillators the drift mobility of charge carriers is 7.52, 9.40 and 18.80 cm2/ Vs, respectively. The optical conductivity in the ultraviolet range is very high nominating the WG interfaces for UV sensing. On the other hand, the impedance spectroscopy analysis for the Yb/WG/C interfaces revealed the wide tunability of the devices when employed as capacitors and as bandpass filters. The WG interfaces can perform as radiowave/microwave band filters. The microwaveen_US
dc.identifier.citationQasrawi, A. F., Abu Alrub, S. N. (2022). Band offsets, dielectric dispersion, optical conduction and impedance spectroscopy analyses of WO3/ Ga2S3 heterojunctions. Brazilian Journal of Physics, 52.en_US
dc.identifier.doi10.1007/s13538-022-01186-5en_US
dc.identifier.scopus2-s2.0-85138029965en_US
dc.identifier.scopusqualityN/Aen_US
dc.identifier.urihttps://doi.org/10.1007/s13538-022-01186-5
dc.identifier.urihttps://hdl.handle.net/20.500.12713/3133
dc.identifier.volume52en_US
dc.identifier.wosWOS:000852394000001en_US
dc.identifier.wosqualityQ3en_US
dc.indekslendigikaynakWeb of Scienceen_US
dc.indekslendigikaynakScopusen_US
dc.institutionauthorQasrawi, Atef Fayez
dc.language.isoenen_US
dc.publisherSpringeren_US
dc.relation.ispartofBrazilian Journal of Physicsen_US
dc.relation.publicationcategoryMakale - Uluslararası Hakemli Dergi - Kurum Öğretim Elemanıen_US
dc.rightsinfo:eu-repo/semantics/closedAccessen_US
dc.subjectWO3/Ga2S3en_US
dc.subjectInterfacesen_US
dc.subjectPlasmonen_US
dc.subjectOptical Conductionsen_US
dc.subjectMicrowave Resonatoen_US
dc.titleBand offsets, dielectric dispersion, optical conduction and impedance spectroscopy analyses of WO3/ Ga2S3 heterojunctionsen_US
dc.typeArticleen_US

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