Band offsets, electron affinities and optical dynamics at the CdBr2/SiO2 interfaces

Basit Öğe Kaydı
dc.authoridAtef Fayez Qasrawi / 0000-0001-8193-6975en_US
dc.authorscopusidAtef Fayez Qasrawi / 6603962677
dc.authorwosidAtef Fayez Qasrawi / R-4409-2019
dc.contributor.authorQasrawi, Atef Fayez
dc.contributor.authorHamarsheh, Areen A.
dc.date.accessioned2021-06-29T07:01:13Z
dc.date.available2021-06-29T07:01:13Z
dc.date.issued2021en_US
dc.departmentİstinye Üniversitesi, Mühendislik ve Doğa Bilimleri Fakültesi, Elektrik-Elektronik Bölümüen_US
dc.description.abstractIndexed keywords Funding details Abstract Herein, the structural, optical, dielectric and optical conductivity parameters of the CdBr2/SiO2 interfaces are reported. Thin films of CdBr2 are coated with 50 nm thick SiO2 under a vacuum pressure of 10?5 mbar. The structural morphological and optical investigations have shown that CdBr2 exhibit hexagonal structure of lattice parameters of a=b=7.20Å and =13.86 Å, energy band gap of 3.32 eV and Urbach energy of 0.84 eV. The interfacing of CdBr2 films with SiO2, shortened the lattice parameters, blue-shifted the energy band gap and decreased the Urbach energy value. The electron affinity of CdBr2 which is determined here is found to be 3.27 eV. The CdBr2/SiO2 interfaces displayed a conduction and a valence band offsets of 2.37 eV and 3.21 eV, respectively. In addition, the dielectric dispersion and optical conduction analyses using the Drude-Lorentz approach have shown that the drift mobility and plasmon frequency (Wpi) of the free charge carriers at the CdBr2/SiO2 interfaces varies in the range of 28.59–22.87 cm2/Vs and 0.41–6.47 GHz, respectively. The effectiveness of the plasmon frequency to limit signal propagation in the heterojunction devices is confirmed by the impedance spectroscopy technique which showed radiowave (RF) band filter characteristics at the targeted Wpi. The energy band offsets, the optical conductivity parameters and the RF filtering properties nominates the CdBr2/SiO2 heterojunctions for use in thin film transistor technology.en_US
dc.identifier.citationQasrawi, A. F., & Hamarsheh, A. A. (2021). Band offsets, electron affinities and optical dynamics at the CdBr2/SiO2 interfaces. Optik, 167467.en_US
dc.identifier.doi10.1016/j.ijleo.2021.167467en_US
dc.identifier.issn0030-4026en_US
dc.identifier.scopus2-s2.0-85108450561en_US
dc.identifier.scopusqualityQ2en_US
dc.identifier.urihttps://doi.org/10.1016/j.ijleo.2021.167467
dc.identifier.urihttps://hdl.handle.net/20.500.12713/1859
dc.identifier.volume243en_US
dc.identifier.wosWOS:000683060900005en_US
dc.identifier.wosqualityQ2en_US
dc.indekslendigikaynakWeb of Scienceen_US
dc.indekslendigikaynakScopusen_US
dc.institutionauthorQasrawi, Atef Fayez
dc.language.isoenen_US
dc.publisherElsevieren_US
dc.relation.ispartofOptiken_US
dc.relation.publicationcategoryMakale - Uluslararası Hakemli Dergi - Kurum Öğretim Elemanıen_US
dc.rightsinfo:eu-repo/semantics/closedAccessen_US
dc.subjectBand Offsetsen_US
dc.subjectCdBr2/SiO2 Interfacesen_US
dc.subjectMicrowave Resonatorsen_US
dc.subjectOptical Conductivityen_US
dc.titleBand offsets, electron affinities and optical dynamics at the CdBr2/SiO2 interfacesen_US
dc.typeArticleen_US

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