p-Si/n-CrSe2 Heterojunctions Designed as High-Frequency Capacitors and Photosensors

dc.authoridQasrawi, Atef Fayez/0000-0001-8193-6975
dc.authorwosidQasrawi, Atef Fayez/R-4409-2019
dc.contributor.authorAlgarni, Sabah E.
dc.contributor.authorQasrawi, A. F.
dc.contributor.authorKhusayfan, Najla M.
dc.contributor.authorAlharbi, Seham R.
dc.contributor.authorAlfhaid, Latifah Hamad Khalid
dc.date.accessioned2024-05-19T14:46:39Z
dc.date.available2024-05-19T14:46:39Z
dc.date.issued2024
dc.departmentİstinye Üniversitesien_US
dc.description.abstractIn this work, polycrystalline n-CrSe2 nanosheets with thickness of 100 nm are grown on p-type Si wafers by the thermal deposition technique under vacuum pressure of 10(-5) mbar. Structural and optical investigations showed the preferred growth of the trigonal phase of CrSe2 on Si substrates. Direct allowed transitions within an energy band gap of 2.60 eV were found to be dominant in the films. Silver contacts on the layers allowed construction of hybrid optoelectronic device structure formed from Ag/p-Si Schottky arm and p-Si/n-CrSe(2)pn junction. The device runs in such a way that forward biasing of the Schottky arm is accompanied by a reverse biasing of the pn junction. It is observed that the hybrid device structure can perform as a high-frequency capacitor. The capacitance-voltage characteristic curves show that these capacitors can respond to ac signals with frequencies of 100 MHz. They also exhibit bandstop filter characteristics allowing the passing of signals with return loss and voltage standing wave ratios exceeding 10 dB and 1.76, respectively, at 60 MHz. The device under study displayed rectifying and photo-sensing properties with an asymmetry ratio of 60 in the dark and 217 under excitation of visible light. Visible light excitation of these photosensors displayed voltage biasing dependence in their current responsivity, external quantum efficiency and specific detectivity, reaching values of 0.24 A/W, 65.2% and 4.83 x 10(9) Jones, respectively. The features of the hybrid devices which use CrSe2 nanosheets as active media make them good candidates for use in radio wave and visible light communication technologies.en_US
dc.description.sponsorshipUniversity of Jeddah [UJ-23-DR-47]; University of Jeddah, Jeddah, Saudi Arabia; University of Jeddahen_US
dc.description.sponsorshipThis work was funded by the University of Jeddah, Jeddah, Saudi Arabia, under grant No. (UJ-23-DR-47). Therefore, the authors thank the University of Jeddah for its technical and financial supporten_US
dc.identifier.doi10.1007/s11664-024-11004-0
dc.identifier.endpage2600en_US
dc.identifier.issn0361-5235
dc.identifier.issn1543-186X
dc.identifier.issue5en_US
dc.identifier.scopus2-s2.0-85187921296en_US
dc.identifier.scopusqualityQ3en_US
dc.identifier.startpage2591en_US
dc.identifier.urihttps://doi.org10.1007/s11664-024-11004-0
dc.identifier.urihttps://hdl.handle.net/20.500.12713/5567
dc.identifier.volume53en_US
dc.identifier.wosWOS:001185658200001en_US
dc.identifier.wosqualityN/Aen_US
dc.indekslendigikaynakWeb of Scienceen_US
dc.indekslendigikaynakScopusen_US
dc.language.isoenen_US
dc.publisherSpringeren_US
dc.relation.ispartofJournal of Electronic Materialsen_US
dc.relation.publicationcategoryMakale - Uluslararası Hakemli Dergi - Kurum Öğretim Elemanıen_US
dc.rightsinfo:eu-repo/semantics/closedAccessen_US
dc.snmz20240519_kaen_US
dc.subjectSien_US
dc.subjectCrseen_US
dc.subjectRectifiersen_US
dc.subjectVisible Light Communicationen_US
dc.subjectBandstop Filtersen_US
dc.subjectPhotosensorsen_US
dc.titlep-Si/n-CrSe2 Heterojunctions Designed as High-Frequency Capacitors and Photosensorsen_US
dc.typeArticleen_US

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