Optical and dielectric dispersion in the Ge/In2Se3/Ga2S3 interfaces

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dc.authoridAtef Fayez Qasrawi / 0000-0001-8193-6975en_US
dc.authorscopusidAtef Fayez Qasrawi / 6603962677
dc.authorwosidAtef Fayez Qasrawi / R-4409-2019
dc.contributor.authorQasrawi, Atef Fayez
dc.contributor.authorOmareya, O. A.
dc.date.accessioned2022-05-18T11:51:18Z
dc.date.available2022-05-18T11:51:18Z
dc.date.issued2022en_US
dc.departmentİstinye Üniversitesi, Mühendislik ve Doğa Bilimleri Fakültesi, Elektrik-Elektronik Bölümüen_US
dc.description.abstractIn this article, the optical and dielectric performance of the Ge, Ge/In2Se3 and Ge/In2Se3/Ga2S3 interfaces are reported and discussed. The growth nature of the physically vacuum deposited thin film layers is investigated by means of X-ray diffraction and energy dispersive X-ray spectroscopy. Each 200 nm thick layer exhibited an amorphous type of crystallization with appropriate atomic stoichiometry. Optically, the Ge/In2Se3/Ga2S3 system is found to exhibit a conduction and a valence band offsets of values of 0.53 and 0.47 eV at the Ge/In2Se3 and of values of 0.30 and 0.70 eV at the In2Se3/Ga2S3 interfaces, respectively. The values are high enough to actualize quantum confinements in the heterojunction device. The formed double and three layers displayed higher light absorbability than single layers. On the other hand, the dielectric dispersion analysis has shown a wide tunability in the dielectric property in visible light and near IR regions. The dielectric responses at the Ge/In2Se3 and at the Ge/In2Se3/Ga2S3 interfaces are linear below 2.10 eV and 1.53 eV, respectively. The modeling of the dielectric function revealed the optical conductivity parameters presented by the drift mobility, scattering time, plasmon frequency and free electron density. It was observed that the quantum condiment at the Ge/In2Se3 interfaces improved both of the drift mobility and made the scattering time longer at femtosecond levels. The establishing of the second quantum confinement at the second interface In2Se3/Ga2S3 raised the drift mobility more and extended the scattering time further. With the estimated plasmon frequencies, the formation of the Ge/In2Se3/Ga2S3 interface appears to be promising for use in optoelectronic device production especially in photodetection issues.en_US
dc.identifier.citationQasrawi, A. F., Omareya, O. A. (2022). Optical and dielectric dispersion in the Ge/In2Se3/Ga2S3 interfaces. Chalcogenide Letters, 19(5), 319-327.en_US
dc.identifier.doi10.15251/CL.2022.195.319en_US
dc.identifier.endpage327en_US
dc.identifier.issue5en_US
dc.identifier.scopus2-s2.0-85130590612en_US
dc.identifier.scopusqualityN/Aen_US
dc.identifier.startpage319en_US
dc.identifier.urihttps://doi.org/10.15251/CL.2022.195.319
dc.identifier.urihttps://hdl.handle.net/20.500.12713/2667
dc.identifier.volume19en_US
dc.identifier.wosWOS:000798493800002en_US
dc.identifier.wosqualityQ4en_US
dc.indekslendigikaynakWeb of Scienceen_US
dc.indekslendigikaynakScopusen_US
dc.institutionauthorQasrawi, Atef Fayez
dc.language.isoenen_US
dc.publisherForum of Chalcogenidersen_US
dc.relation.ispartofChalcogenide Lettersen_US
dc.relation.publicationcategoryMakale - Uluslararası Hakemli Dergi - Kurum Öğretim Elemanıen_US
dc.rightsinfo:eu-repo/semantics/openAccessen_US
dc.subjectNanosandwichen_US
dc.subjectDielectricen_US
dc.subjectPlasmon Devicesen_US
dc.subjectGe Substrateen_US
dc.titleOptical and dielectric dispersion in the Ge/In2Se3/Ga2S3 interfacesen_US
dc.typeArticleen_US

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