Au/CrSe stacked layers designed as optical absorbers, tunneling barriers and negative capacitance sources

Basit Öğe Kaydı
dc.authoridAtef Fayez Qasrawi / 0000-0001-8193-6975en_US
dc.authorscopusidAtef Fayez Qasrawi / 6603962677en_US
dc.authorwosidAtef Fayez Qasrawi / R-4409-2019en_US
dc.contributor.authorAlfhaid, Latifah Hamad Khalid
dc.contributor.authorQasrawi, Atef Fayez
dc.date.accessioned2023-09-12T13:42:36Z
dc.date.available2023-09-12T13:42:36Z
dc.date.issued2023en_US
dc.departmentİstinye Üniversitesi, Mühendislik ve Doğa Bilimleri Fakültesi, Elektrik-Elektronik Mühendisliği Bölümüen_US
dc.description.abstractHerein thin films of CrSe (500 nm) are deposited onto glass and semitransparent gold nanosheets (100 nm) under a vacuum pressure of 10?5 mbar. Au nanosheets substrates induced the formation of CrSe instead of CrSe2 which grows onto glass substrates. The Au/CrSe stacked layers exhibited enhanced light absorption reaching 25% in the ultraviolet, visible and infrared ranges of light. In addition Au nanosheets successfully redshifted the direct allowed transitions energy band gap from 2.60 eV to 2.40 eV. On the other hand electrical investigations have shown that CrSe2 thin films exhibit a work function of 5.064 eV. The Au/CrSe interfaces displayed tunneling type Schottky barriers of height of 0.56 eV and barrier width of 8 nm. When an ac signal was imposed between the terminals of the Au/CrSe Schottky barriers a negative capacitance (NC) effects was observed in the spectral range of 0.02–1.80 GHz. The NC reached value of ? 100 pF at 0.32 GHz. Fitting of the ac conductivity assuming tunneling type of transport indicated a high degree of localization near the Fermi level reaching a density of cm?3 eV?1. The enhanced light absorption and moderate value of work function in addition to the tunneling type of Schottky formation performing as NC source make the Au/CrSe interfaces promising for use in the design of electro-optic system.en_US
dc.description.sponsorshipUniversity of Hailen_US
dc.identifier.citationAlfhaid, L. H. K., & Qasrawi, A. F. (2023). Au/CrSe Stacked layers designed as optical absorbers, tunneling barriers and negative capacitance sources. Materials Today Communications, 107006.en_US
dc.identifier.doi10.1016/j.mtcomm.2023.107006en_US
dc.identifier.issue12en_US
dc.identifier.scopus2-s2.0-85170057146en_US
dc.identifier.startpage107006en_US
dc.identifier.urihttps://doi.org/10.1016/j.mtcomm.2023.107006
dc.identifier.urihttps://hdl.handle.net/20.500.12713/3971
dc.identifier.volume37en_US
dc.identifier.wosWOS:001080879700001en_US
dc.identifier.wosqualityN/Aen_US
dc.indekslendigikaynakWeb of Scienceen_US
dc.indekslendigikaynakScopusen_US
dc.institutionauthorQasrawi, Atef Fayez
dc.language.isoenen_US
dc.publisherElsevieren_US
dc.relation.ispartofMaterials Today Communicationsen_US
dc.relation.publicationcategoryMakale - Uluslararası Hakemli Dergi - Kurum Öğretim Elemanıen_US
dc.rightsinfo:eu-repo/semantics/closedAccessen_US
dc.subjectAu/CrSeen_US
dc.subjectTunneling Diodesen_US
dc.subjectEnhanced Absorptionen_US
dc.subjectNegative Capacitance Effecten_US
dc.titleAu/CrSe stacked layers designed as optical absorbers, tunneling barriers and negative capacitance sourcesen_US
dc.typeArticleen_US

Dosyalar

Orijinal paket
Listeleniyor 1 - 1 / 1
Küçük Resim Yok
İsim:
287-2023-22-papers -Au-CrSe (Atef latifa ) MTCOMM printed.pdf
Boyut:
3.27 MB
Biçim:
Adobe Portable Document Format
Açıklama:
Tam Metin / Full Text
İndir
Lisans paketi
Listeleniyor 1 - 1 / 1
Küçük Resim Yok
İsim:
license.txt
Boyut:
1.44 KB
Biçim:
Item-specific license agreed upon to submission
Açıklama:
İndir

Koleksiyon

Elektrik-Elektronik Mühendisliği Bölümü Makale Koleksiyonu
Scopus İndeksli Yayınlar Koleksiyonu
WoS İndeksli Yayınlar Koleksiyonu