Fast crystallization of InSe thin films via pulsed laser welding technique and effect of crystallinity on the optical and dielectric properties

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dc.authoridAtef Fayez Qasrawi / 0000-0001-8193-6975en_US
dc.authorscopusidAtef Fayez Qasrawi / 6603962677en_US
dc.authorwosidAtef Fayez Qasrawi / R-4409-2019en_US
dc.contributor.authorKhusayfan, Najla M.
dc.contributor.authorQasrawi, Atef Fayez
dc.contributor.authorKhanfar, Hazem K.
dc.contributor.authorAlharbi, Seham R.
dc.date.accessioned2024-02-21T06:30:58Z
dc.date.available2024-02-21T06:30:58Z
dc.date.issued2024en_US
dc.departmentİstinye Üniversitesi, Mühendislik ve Doğa Bilimleri Fakültesi, Elektrik-Elektronik Mühendisliği Bölümüen_US
dc.description.abstractPhysica Scripta Inclusive Publishing Trusted Science, find out more. ACCEPTED MANUSCRIPT Fast crystallization of InSe thin films via pulsed laser welding technique and effect of crystallinity on the optical and dielectric properties Najla M. Khusayfan1, A F Qasrawi2, Hazem Khanfar3 and Seham Alharbi4 Accepted Manuscript online 18 January 2024 • © 2024 IOP Publishing Ltd What is an Accepted Manuscript? DOI 10.1088/1402-4896/ad2040 DownloadAccepted Manuscript PDF Download PDF Article metrics 3 Total downloads Submit Submit to this Journal MathJax Turn on MathJax Permissions Get permission to re-use this article Share this article Share this content via email Share on Facebook (opens new window) Share on Twitter (opens new window) Share on Mendeley (opens new window) Hide article and author information Author e-mails atef.qasrawi@aaup.edu Author affiliations 1 Department of Physics, University of Jeddah, Jeddah, Jeddah, Makkah, 21959 , SAUDI ARABIA 2 Physics Department, Arab American University, Telfit,, Jenin, P298, Palestine, State of 3 Computer system Engineering , Arab American University, Telfit,, Jenin, Jenin, P298, Palestine, State of 4 Physics Department, University of Jeddah, jeddah, Jeddah, Makkah, 21959 , SAUDI ARABIA ORCID iDs A F Qasrawi https://orcid.org/0000-0001-8193-6975 Hazem Khanfar https://orcid.org/0000-0002-3015-4049 Dates Received 5 October 2023 Revised 17 December 2023 Accepted 18 January 2024 Accepted Manuscript online 18 January 2024 Journal RSS Sign up for new issue notifications Abstract In the current study the crystalline phase of indium selenide thin films which were grown by the thermal evaporation technique is achieved via pulsed laser welding technique (PLW) in a second. The films crystallinity is achieved under various welding conditions including the pulse width (PW), repetition frequency (f_r ) and pulse diameter (d). The optimum parameters for obtaining well crystalline phase are PW=1.0 ms, f_r=10Hz and d=1.0 mm. PLW induced crystallinity showed preferred structure relating to monoclinic phase of InSe. Compositionally while amorphous films exhibited In2Se3 chemical structure, crystalline ones preferred InSe phase. Associated with this type of crystallinity, direct and indirect energy band gap values of 2.32 eV and 3.12 eV are determined. The crystalline films showed lower dielectric constant value accompanied with higher optical conductivity and higher terahertz cutoff frequency in the infrared range of light. In addition the dielectric dispersion spectra were treated using Drude-Lorentz model to read the optical conductivity parameters for the PLW assisted crystalline InSe terahertz resonators. The treatment showed that the crystallinity of the films resulted in improved free carrier density, longer relaxation times at femtosecond level, larger plasmon frequencies and higher drift mobility values. These features together with the response of terahertz cutoff frequency to IR excitations make crystalline InSe thin films promising for optoelectronic and terahertz technology applications.en_US
dc.identifier.citationKhusayfan, N. M., Qasrawi, A. F., Khanfar, H., & Alharbi, S. (2024). Fast crystallization of InSe thin films via pulsed laser welding technique and effect of crystallinity on the optical and dielectric properties. Physica Scripta.en_US
dc.identifier.doi10.1088/1402-4896/ad2040en_US
dc.identifier.scopus2-s2.0-85183946649en_US
dc.identifier.scopusqualityN/Aen_US
dc.identifier.urihttps://doi.org/10.1088/1402-4896/ad2040
dc.identifier.urihttps://hdl.handle.net/20.500.12713/4013
dc.identifier.wosWOS:001152461200001en_US
dc.identifier.wosqualityQ2en_US
dc.indekslendigikaynakWeb of Scienceen_US
dc.indekslendigikaynakScopusen_US
dc.institutionauthorQasrawi, Atef Fayez
dc.language.isoenen_US
dc.publisherIOP Publishingen_US
dc.relation.ispartofPhysica Scriptaen_US
dc.relation.publicationcategoryMakale - Uluslararası Hakemli Dergi - Kurum Öğretim Elemanıen_US
dc.rightsinfo:eu-repo/semantics/closedAccessen_US
dc.subjectMonoclinic InSeen_US
dc.subjectPulsed Laser Weldingen_US
dc.subjectTerahertz Filtersen_US
dc.subjectDielectric Dispersionen_US
dc.subjectPlasmonen_US
dc.titleFast crystallization of InSe thin films via pulsed laser welding technique and effect of crystallinity on the optical and dielectric propertiesen_US
dc.typeArticleen_US

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