Yb/WO3/Yb back to back Schottky barriers designed as voltage controlled rectifiers and as microwave resonators

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dc.authoridAtef Fayez Qasrawi / 0000-0001-8193-6975en_US
dc.authorscopusidAtef Fayez Qasrawi / 6603962677en_US
dc.authorwosidAtef Fayez Qasrawi / R-4409-2019
dc.contributor.authorQasrawi, Atef Fayez
dc.contributor.authorDaragme, Rana B.
dc.contributor.authorQasrawi, Atef Fayez
dc.date.accessioned2022-06-01T13:02:05Z
dc.date.available2022-06-01T13:02:05Z
dc.date.issued2022en_US
dc.departmentİstinye Üniversitesi, Mühendislik ve Doğa Bilimleri Fakültesi, Elektrik-Elektronik Bölümüen_US
dc.description.abstractHerein, p -WO3 thin films coated onto ytterbium thin film substrates are used as active layers to fabricate a back to back Schottky (BBS) barriers. The Schottky contacts and the tungsten oxide active layers are grown by the thermal evaporation technique under a vacuum pressure of 10-5 mbar. The films are structurally, morphologically, optically and electrically characterized. The physical nature of the grown p -WO3 layers is amorphous comprising excess oxygen in its composition. Electrically, the BBS devices displayed a biasing dependent current rectification ratio confirming the tunneling type of Schottky barriers. The current conduction are dominated through tunneling barriers of height of ~0.80 eV. The barriers allow hole tunneling within energy barriers of widths of ~45 nm and of 300 nm under reverse and forward biasing conditions, respectively. In addition, the impedance spectroscopy measurements have shown the ability of wide tunability of the resistance and capacitance of the devices resulting in a microwave cutoff frequency exceeding 2.0 GHz. The resistive and capacitive features of the devices in addition to the microwave cutoff frequency spectra nominate the Yb/p-WO3/Yb BBS devices for use as microwave resonators suitable for 4G/5G technologies. © 2022, S.C. Virtual Company of Phisics S.R.L. All rights reserved.en_US
dc.identifier.citationQasrawi, A. F., Daragme, R. B., & Qasrawi, A. F. (2022). Yb/WO3/Yb back to back schottky barriers designed as voltage controlled rectifiers and as microwave resonators. Journal of Ovonic Research, 18(2), 253-258. doi:10.15251/jor.2022.182.253en_US
dc.identifier.doi10.15251/jor.2022.182.253en_US
dc.identifier.endpage258en_US
dc.identifier.issn1842-2403en_US
dc.identifier.issue2en_US
dc.identifier.scopus2-s2.0-85130494565en_US
dc.identifier.scopusqualityQ3en_US
dc.identifier.startpage253en_US
dc.identifier.urihttps://doi.org/10.15251/jor.2022.182.253
dc.identifier.urihttps://hdl.handle.net/20.500.12713/2773
dc.identifier.volume18en_US
dc.identifier.wosWOS:000798510300011en_US
dc.identifier.wosqualityQ4en_US
dc.indekslendigikaynakWeb of Scienceen_US
dc.indekslendigikaynakScopusen_US
dc.institutionauthorQasrawi, Atef Fayez
dc.language.isoenen_US
dc.publisherS.C. Virtual Company of Phisics S.R.Len_US
dc.relation.ispartofJournal of Ovonic Researchen_US
dc.relation.publicationcategoryMakale - Uluslararası Hakemli Dergi - Kurum Öğretim Elemanıen_US
dc.rightsinfo:eu-repo/semantics/openAccessen_US
dc.subjectBack to Back Schottkyen_US
dc.subjectMicrowave Resonatorsen_US
dc.subjectRectifiersen_US
dc.subjectYb/WO3en_US
dc.titleYb/WO3/Yb back to back Schottky barriers designed as voltage controlled rectifiers and as microwave resonatorsen_US
dc.typeArticleen_US

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