Optoelectronic performance of n?Si/p?MgSe heterojunctions as a visible light communication component

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dc.authoridAtef Fayez Qasrawi / 0000-0001-8193-6975en_US
dc.authorscopusidAtef Fayez Qasrawi / 6603962677en_US
dc.authorwosidAtef Fayez Qasrawi / R-4409-2019en_US
dc.contributor.authorAlmotiri, R. A.
dc.contributor.authorQasrawi, Atef Fayez
dc.date.accessioned2022-10-27T12:59:25Z
dc.date.available2022-10-27T12:59:25Z
dc.date.issued2022en_US
dc.departmentİstinye Üniversitesi, Mühendislik ve Doğa Bilimleri Fakültesi, Elektrik-Elektronik Bölümüen_US
dc.description.abstractHerein magnesium selenide thin films coated onto glass and Si substrates are studied and characterized. The films, prepared by the thermal vacuum evaporation technique under a vacuum pressure of 10?5 mbar, are structurally, morphologically, compositionally, optically, and electrically investigated. While films grown onto glass substrates showed the existence of cubic phases of MgSe and MgSe2, films coated onto Si substrates contained SiSe2. Replacement of glass substrates by Si highly improved the crystallinity of the films. In addition, the optical analyses on the films grown onto Si substrates indicated the formation of Si/MgSe heterojunctions with valence and conduction band offsets of 0.95?eV and 0.40?eV, respectively. MgSe films are coated onto Si substrates and contacted with Ag contacts performed as photosensors suitable for vehicle visible light communications. The asymmetry (rectification ratios), the current responsivity, the noise equivalent power factor, and the detectivity of the devices reached 517, 0.73?A/W, 5.93W/Hz1/2 and 5.8 Jones, respectively, at 4.3?V.en_US
dc.identifier.citationAlmotiri, R.A., Qasrawi, A.F. (2022). Optoelectronic performance of n−Si/p−MgSe heterojunctions as a visible light communication component, 271 doi: 10.1016/j.ijleo.2022.170106en_US
dc.identifier.doi10.1016/j.ijleo.2022.170106en_US
dc.identifier.scopus2-s2.0-85140069098en_US
dc.identifier.scopusqualityN/Aen_US
dc.identifier.urihttps://doi.org/10.1016/j.ijleo.2022.170106
dc.identifier.urihttps://hdl.handle.net/20.500.12713/3201
dc.identifier.volume271en_US
dc.identifier.wosWOS:000882760200009en_US
dc.identifier.wosqualityQ2en_US
dc.indekslendigikaynakWeb of Scienceen_US
dc.indekslendigikaynakScopusen_US
dc.institutionauthorQasrawi, Atef Fayez
dc.language.isoenen_US
dc.publisherElsevier B.V.en_US
dc.relation.ispartofOptiken_US
dc.relation.publicationcategoryMakale - Uluslararası Hakemli Dergi - Kurum Öğretim Elemanıen_US
dc.rightsinfo:eu-repo/semantics/closedAccessen_US
dc.subjectMgSeen_US
dc.subjectThermal Evaporationen_US
dc.subjectVLCen_US
dc.subjectPhotosensorsen_US
dc.subjectBand Offseten_US
dc.titleOptoelectronic performance of n?Si/p?MgSe heterojunctions as a visible light communication componenten_US
dc.typeArticleen_US

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