Design and characterization of MoO3/In2Se3 heterojunctions as terahertz/gigahertz band filters suitable for visible light communications and 3G/4G technologies

Basit Öğe Kaydı
dc.authoridAtef Fayez Qasrawi / 0000-0001-8193-6975en_US
dc.authorscopusidAtef Fayez Qasrawi / 6603962677
dc.authorwosidAtef Fayez Qasrawi / R-4409-2019
dc.contributor.authorQasrawi, Atef Fayez
dc.contributor.authorNancy, M. A. Yaseen
dc.date.accessioned2021-09-10T05:34:12Z
dc.date.available2021-09-10T05:34:12Z
dc.date.issued2021en_US
dc.departmentİstinye Üniversitesi, Mühendislik ve Doğa Bilimleri Fakültesi, Elektrik-Elektronik Bölümüen_US
dc.description.abstractAbstract Herein, MoO3/In2Se3 (MI) heterojunctions are fabricated by a vacuum deposition technique for use as wideband filters. The MI devices are composed of optical and electrical parts to detect visible light spectra and microwave ac signals (0.01-3.0 GHz). Basic physical characterizations on the MI devices have shown that the devices are amorphous in nature, composed of MoO2.86/In2Se2.76 and exhibit valence and conduction band offsets of 1.62 eV and 3.10 eV, respectively. The optical conductivity analyses have shown that, the mobility and the plasmon frequency of charge carriers in the MI devices can reach 121.70 cm2/Vs and 5.39 GHz, respectively. The terahertz cutoff frequency in these heterojunctions is in the range of 0.54-4.80 THz. On the other hand, application aimed characterizations has shown that the MI heterojunctions exhibit high photosensitivity against daylight light-emitting-diode irradiation. In addition, imposing ac signal of power of -1.0 dBm and measuring the power transmitted within a band width of 5.0 MHz in the frequency domain of 0.01-3.0 GHz indicated that the MI heterojunction devices can behave as multiband bandstop filters with notch frequency value that suits 3G/4G mobile technologies. The features of the currently proposed MI devices nominate them for use as optical receivers suitable for visible light communication technology and as microwave band stop filters. Keywords: MoO3/In2Se3 heterojunction,band offsets, microwave resonators, terahertzen_US
dc.identifier.citationQasrawi, A. F., & Nancy, M. A. Yaseen (2021). Design and characterization of MoO3/In2Se3 heterojunctions as terahertz/gigahertz band filters suitable for visible light communications and 3G/4G technologies. IOP Publishing, Physica Scripta.en_US
dc.identifier.doi10.1088/1402-4896/ac24afen_US
dc.identifier.issn1402-4896en_US
dc.identifier.scopus2-s2.0-85116356960en_US
dc.identifier.scopusqualityN/Aen_US
dc.identifier.urihttps://doi.org/10.1088/1402-4896/ac24af
dc.identifier.urihttps://hdl.handle.net/20.500.12713/2035
dc.identifier.wosWOS:000697649700001en_US
dc.identifier.wosqualityQ2en_US
dc.indekslendigikaynakWeb of Scienceen_US
dc.indekslendigikaynakScopusen_US
dc.institutionauthorQasrawi, Atef Fayez
dc.language.isoenen_US
dc.publisherIOP Publishingen_US
dc.relation.ispartofPhysica Scriptaen_US
dc.relation.publicationcategoryMakale - Uluslararası Hakemli Dergi - Kurum Öğretim Elemanıen_US
dc.rightsinfo:eu-repo/semantics/closedAccessen_US
dc.titleDesign and characterization of MoO3/In2Se3 heterojunctions as terahertz/gigahertz band filters suitable for visible light communications and 3G/4G technologiesen_US
dc.typeArticleen_US

Dosyalar

Orijinal paket
Listeleniyor 1 - 1 / 1
Küçük Resim Yok
Ä°sim:
97.pdf
Boyut:
1.14 MB
Biçim:
Adobe Portable Document Format
Açıklama:
Tam Metin / Full Text
Ä°ndir
Lisans paketi
Listeleniyor 1 - 1 / 1
Küçük Resim Yok
Ä°sim:
license.txt
Boyut:
1.44 KB
Biçim:
Item-specific license agreed upon to submission
Açıklama:
Ä°ndir

Koleksiyon

Elektrik-Elektronik Mühendisliği Bölümü Makale Koleksiyonu
Scopus İndeksli Yayınlar Koleksiyonu
WoS İndeksli Yayınlar Koleksiyonu