Design of Au/Cdbr2/Au as negative capacitance devices and as band filters suitable for 4G technologies

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dc.authoridAtef Fayez Qasrawi / 0000-0001-8193-6975en_US
dc.authorscopusidAtef Fayez Qasrawi / 6603962677
dc.authorwosidAtef Fayez Qasrawi / R-4409-2019
dc.contributor.authorQasrawi, Atef Fayez
dc.contributor.authorHamarsheh, Areen A.
dc.date.accessioned2021-10-27T06:01:28Z
dc.date.available2021-10-27T06:01:28Z
dc.date.issued2021en_US
dc.departmentİstinye Üniversitesi, Mühendislik ve Doğa Bilimleri Fakültesi, Elektrik-Elektronik Bölümüen_US
dc.description.abstractHerein, cadmium bromide thin film devices are designed for possible use in communication technology. The 1.0 thin layer of CdBr2 is sandwiched between two Au (1.0 thick) layers using the thermal evaporation technique under a vacuum pressure of 10-5 mbar. The Au/CdBr2/Au devices are structurally morphologically and electrically characterized. It is observed that the hexagonal cadmium bromide exhibits large lattice mismatches with cubic Au substrates. The randomly distributed nano- rod like grains is accompanied with average surface roughness of ~26 nm. When an ac signal of low amplitude is imposed between the terminals of the Au/CdBr2/Au devices, a negative capacitance effect in the frequency domain of 10-1800 MHz is observed. In addition, analysis of the impedance spectra in the same domain has shown that the device behaves as band pass/stop filters suitable for 4G technology. The microwave based standard analysis of the Au/CdBr2/Au band filters have shown that it displays a notch () frequency of 2.0 GHz. The cutoff frequency at reaches 7.86 GHz. The features of the Au/CdBr2/Au devices nominate it for use as microwave resonators and as negative capacitance devices suitable for; 4G technology, noise reduction and for parasitic capacitance cancellation.en_US
dc.identifier.citationQasrawi, A. F. and Hamarsheh, Areen A. (2021). Design of Au/Cdbr2/Au as Negative Capacitance Devices and as Band Filters Suitable for 4G Technologies. Materials Research [online]. v. 24, n. 6.en_US
dc.identifier.doi10.1590/1980-5373-MR-2021-0378en_US
dc.identifier.issn1980-5373en_US
dc.identifier.issue6en_US
dc.identifier.scopus2-s2.0-85121678663en_US
dc.identifier.scopusqualityN/Aen_US
dc.identifier.urihttps://doi.org/10.1590/1980-5373-MR-2021-0378
dc.identifier.urihttps://hdl.handle.net/20.500.12713/2189
dc.identifier.volume24en_US
dc.identifier.wosWOS:000728213900001en_US
dc.identifier.wosqualityQ4en_US
dc.indekslendigikaynakWeb of Scienceen_US
dc.indekslendigikaynakScopusen_US
dc.institutionauthorQasrawi, Atef Fayez
dc.language.isoenen_US
dc.publisherSciELOen_US
dc.relation.ispartofMaterials Researchen_US
dc.relation.publicationcategoryMakale - Uluslararası Hakemli Dergi - Kurum Öğretim Elemanıen_US
dc.rightsinfo:eu-repo/semantics/closedAccessen_US
dc.subjectCdBr2en_US
dc.subject4G Band Filteren_US
dc.subjectNegative Capacitanceen_US
dc.subjectMicrowave Resonatorsen_US
dc.titleDesign of Au/Cdbr2/Au as negative capacitance devices and as band filters suitable for 4G technologiesen_US
dc.typeArticleen_US

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