Fabrication and characterization of Se/WO3 heterojunctions designed as terahertz/gigahertz dielectric resonators

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dc.authoridAtef Fayez Qasrawi / 0000-0001-8193-6975en_US
dc.authorscopusidAtef Fayez Qasrawi / 6603962677
dc.authorwosidAtef Fayez Qasrawi / R-4409-2019
dc.contributor.authorQasrawi, Atef Fayez
dc.contributor.authorDaragme, Rana B.
dc.date.accessioned2022-02-12T12:32:55Z
dc.date.available2022-02-12T12:32:55Z
dc.date.issued2022en_US
dc.departmentİstinye Üniversitesi, Mühendislik ve Doğa Bilimleri Fakültesi, Elektrik-Elektronik Bölümüen_US
dc.description.abstractIn this work, Selenium (Se) thin film substrates are coated with tungsten oxide thin layers. The Se/WO3 interfaces are fabricated using a vacuum deposition technique. The substrates displayed stable polycrystalline structure of hexagonal selenium when coated with amorphous WO3. The surface morphology revealed preferred growth of Se nanowires. The coating of Se with WO3 enhanced the light absorbability in the visible and infrared ranges of light spectrum. In addition, the Se/WO3 heterojunctions exhibited conduction and valence band offsets of values of 2.03 eV and 0.63 eV, respectively. The band offsets are sufficiently large to force quantum confinement at the interface. It was observed that Se/WO3 behaves as good dielectric resonator revealing resonance peaks in the infrared, visible and ultraviolet ranges of light. Moreover, computing the optical conductivity parameters for these dielectric oscillators revealed drift mobility and plasmon frequency values that are suitable for optical communications. Furthermore, as a terahertz resonator, the Se/WO3 dielectric media displayed terahertz cutoff frequency values in the range of 0.6-75 THz depending on the exciting photon energy. As practical application, when photo-excited with daylight light, the carbon contacted planner Se/WO3 interfaces displayed a light power dependent photosensitivity. The photosensitivity increases 38 times upon irradiation of 0.9 W. With these features, the Se/WO3 heterojunction devices can be nominated for applications in optical communications.en_US
dc.identifier.citationF. Qasrawi and Rana B. Daragme, (2022).Fabrication and characterization of Se/WO3 heterojunctions designed as terahertz/gigahertz dielectric resonators, O p t i k.en_US
dc.identifier.doi10.1016/j.ijleo.2022.168719en_US
dc.identifier.issn0030-4026en_US
dc.identifier.issn1618-1336en_US
dc.identifier.scopus2-s2.0-85124544485en_US
dc.identifier.scopusqualityQ2en_US
dc.identifier.urihttps://doi.org/10.1016/j.ijleo.2022.168719
dc.identifier.urihttps://hdl.handle.net/20.500.12713/2486
dc.identifier.wosWOS:000755189000004en_US
dc.identifier.wosqualityQ2en_US
dc.indekslendigikaynakWeb of Scienceen_US
dc.indekslendigikaynakScopusen_US
dc.institutionauthorQasrawi, Atef Fayez
dc.language.isoenen_US
dc.publisherElsevieren_US
dc.relation.ispartofOptiken_US
dc.relation.publicationcategoryMakale - Uluslararası Hakemli Dergi - Kurum Öğretim Elemanıen_US
dc.rightsinfo:eu-repo/semantics/closedAccessen_US
dc.subjectSe/WO3en_US
dc.subjectOptical Communicationsen_US
dc.subjectTerahertzen_US
dc.subjectDielectric Resonatoren_US
dc.titleFabrication and characterization of Se/WO3 heterojunctions designed as terahertz/gigahertz dielectric resonatorsen_US
dc.typeArticleen_US

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