InSe/CrSe interfaces performed as resistive switches and band filters for Gigahertz/Terahertz communication technology applications

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dc.authoridAtef Fayez Qasrawi / 0000-0001-8193-6975en_US
dc.authorscopusidAtef Fayez Qasrawi / 6603962677en_US
dc.authorwosidAtef Fayez Qasrawi / R-4409-2019en_US
dc.contributor.authorAlgarni, Sabah E.
dc.contributor.authorQasrawi, Atef Fayez
dc.contributor.authorKhusayfan, Najla M.
dc.date.accessioned2024-02-22T07:35:55Z
dc.date.available2024-02-22T07:35:55Z
dc.date.issued2024en_US
dc.departmentİstinye Üniversitesi, Mühendislik ve Doğa Bilimleri Fakültesi, Elektrik-Elektronik Mühendisliği Bölümüen_US
dc.description.abstractHerein chromium selenide (n-CrSe) nanosheets are deposited onto amorphous indium selenide (n-InSe) thin films by the thermal evaporation technique under a vacuum pressure of 10?5 mbar. The formed InSe/CrSe heterojunctions are structurally, optically and electrically investigated. InSe/CrSe heterojunctions exhibited a band structure discontinuities at the InSe/CrSe interfaces presented by a conduction and valence band offsets of 0.50 eV and 0.65 eV, respectively. The isotype InSe/CrSe heterojunctions exhibited resistive switching property under a forward and reverse biasing voltages of 1.5 V and 0.3 V, respectively. In addition computer assisted fittings which were carried out on the current–voltage characteristics of the InSe/CrSe devices have shown the existence of large barrier height of 1.75 eV at the InSe/CrSe interfaces. Moreover, low amplitude ac signal analyses have shown that the device under study performed as negative conductance sources with increased negative conductance values with increasing signal frequency. The negative conductance effect resulted from the deficiency of selenium atoms in InSe and CrSe as confirmed by the energy dispersive X-ray spectroscopy. Furthermore combination of the analysis of the picofarad level- capacitance with the conductance allowed determining the cutoff limits of the InSe/CrSe devices when treated as signal filters. The cutoff frequency of the InSe/ CrSe devices varied in the range of 10M-1.1 THz assuring the suitability of the devices for megahertz/gigahertz/terahertz technology applicationsen_US
dc.identifier.citationAlgarni, S. E., Qasrawi, A. F., & Khusayfan, N. M. (2024). InSe/CrSe Interfaces Performed as Resistive Switches and Band Filters for Gigahertz/Terahertz Communication Technology Applications. Optical and Quantum Electronics, 56(3), 286.en_US
dc.identifier.doi10.1007/s11082-023-05902-6en_US
dc.identifier.issn1572-817Xen_US
dc.identifier.issue1en_US
dc.identifier.scopus2-s2.0-85180868375en_US
dc.identifier.scopusqualityQ2en_US
dc.identifier.startpage286en_US
dc.identifier.urihttps://doi.org/10.1007/s11082-023-05902-6
dc.identifier.urihttps://hdl.handle.net/20.500.12713/4015
dc.identifier.volume56en_US
dc.identifier.wosWOS:001132160000014en_US
dc.identifier.wosqualityQ2en_US
dc.indekslendigikaynakWeb of Scienceen_US
dc.indekslendigikaynakScopusen_US
dc.institutionauthorQasrawi, Atef Fayez
dc.language.isoenen_US
dc.publisherSpringeren_US
dc.relation.ispartofOptical and Quantum Electronicsen_US
dc.relation.publicationcategoryMakale - Uluslararası Hakemli Dergi - Kurum Öğretim Elemanıen_US
dc.rightsinfo:eu-repo/semantics/closedAccessen_US
dc.subjectInSe/CrSeen_US
dc.subjectIsotype Structureen_US
dc.subjectNegative Conductanceen_US
dc.subjectTerahertzen_US
dc.subjectGigahertzen_US
dc.titleInSe/CrSe interfaces performed as resistive switches and band filters for Gigahertz/Terahertz communication technology applicationsen_US
dc.typeArticleen_US

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