Properties of (Glass, Pb)/MgSe interfaces designed as terahertz band filters

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dc.authoridAtef Fayez Qasrawi / 0000-0001-8193-6975en_US
dc.authorscopusidAtef Fayez Qasrawi / 6603962677en_US
dc.authorwosidAtef Fayez Qasrawi / R-4409-2019en_US
dc.contributor.authorQasrawi, Atef Fayez
dc.contributor.authorSamen, Lara O. Abu
dc.contributor.authorAtari, Samah S.
dc.date.accessioned2023-02-15T07:23:58Z
dc.date.available2023-02-15T07:23:58Z
dc.date.issued2023en_US
dc.departmentİstinye Üniversitesi, Mühendislik ve Doğa Bilimleri Fakültesi, Elektrik-Elektronik Mühendisliği Bölümüen_US
dc.description.abstractHerein, thin films of MgSe (300 nm) are deposited onto glass and semitransparent Pb (150 nm) substrates by the thermal evaporation technique under a vacuum pressure of 10?5 mbar. The films are structurally, morphologically, compositionally, and optically characterized. It is found that Pb substrates induced the formation of single phase of MgSe against a mixture of MgSe and MgSe2. Lead substrates improved the light absorbability in the infrared (IR) range of light. Pb substrates also red-shifted and blue-shifted the direct and indirect band gap of MgSe by 0.62 eV and 0.10 eV, respectively. The dielectric dispersion analyses have shown that Pb substrates are more effective in the visible and IR ranges of light. When Pb/MgSe films are treated as band filters, they showed wide range of tunability of the terahertz cutoff frequency. The Pb/MgSe interfaces are found good candidates as terahertz band filters sensitive to IR-850 nm lasers which are used in communication technology. Optical oscillators of this wavelength performed within scattering time of 0.50 fs and exhibited drift mobility of 4.69 cm2/Vs. In addition, Drude-Lorentz analyses which targeted finding optoelectronic information about Pb/MgSe have shown the ability of using Pb/MgSe interfaces in thin film transistors, ultraviolet photo-detection, and terahertz technologies.en_US
dc.identifier.citationQasrawi, A.F., Samen, L.O.A. & Atari, S.S. Properties of (Glass, Pb)/MgSe Interfaces Designed as Terahertz Band Filters. Braz J Phys 53, 51 (2023). https://doi.org/10.1007/s13538-023-01260-6en_US
dc.identifier.doi10.1007/s13538-023-01260-6en_US
dc.identifier.scopus2-s2.0-85148239268en_US
dc.identifier.scopusqualityN/Aen_US
dc.identifier.startpage51en_US
dc.identifier.urihttps://doi.org/10.1007/s13538-023-01260-6
dc.identifier.urihttps://hdl.handle.net/20.500.12713/3880
dc.identifier.volume53en_US
dc.identifier.wosWOS:000929989800001en_US
dc.identifier.wosqualityN/Aen_US
dc.indekslendigikaynakWeb of Scienceen_US
dc.indekslendigikaynakScopusen_US
dc.institutionauthorQasrawi, Atef Fayez
dc.language.isoenen_US
dc.publisherSpringeren_US
dc.relation.ispartofBrazilian Journal of Physicsen_US
dc.relation.publicationcategoryMakale - Uluslararası Hakemli Dergi - Kurum Öğretim Elemanıen_US
dc.rightsinfo:eu-repo/semantics/closedAccessen_US
dc.subjectPb/MgSe Thermal evaporation Terahertz Dielectric dispersionen_US
dc.titleProperties of (Glass, Pb)/MgSe interfaces designed as terahertz band filtersen_US
dc.typeArticleen_US

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