Lead-tungsten oxide interfaces designed as gigahertz/terahertz filters

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dc.authoridAtef Fayez Qasrawi / 0000-0001-8193-6975en_US
dc.authorscopusidAtef Fayez Qasrawi / 6603962677en_US
dc.authorwosidAtef Fayez Qasrawi / R-4409-2019en_US
dc.contributor.authorAlkhamisi, Manal M.
dc.contributor.authorQasrawi, Atef Fayez
dc.contributor.authorKhanfar, Hazem K.
dc.date.accessioned2023-04-12T13:46:40Z
dc.date.available2023-04-12T13:46:40Z
dc.date.issued2023en_US
dc.departmentİstinye Üniversitesi, Mühendislik ve Doğa Bilimleri Fakültesi, Elektrik-Elektronik Mühendisliği Bölümüen_US
dc.description.abstractHerein amorphous tungsten oxide thin films of thicknesses of 300 nmare coated onto semitransparent Pb films (100 nm) by the thermal evaporation technique under a vacuum pressure of 10?5 mbar. Optical investigations in these films have shown that Pb nanosheets enhances the light absorbability in the visible and infrared ranges of light without significant change in the energy band gap value. In addition deep analyses of the optical conductivity and terahertz cutoff frequency spectra of the Pb/WO3 optical filters revealed that the cutoff frequency value in the visible range of light is invariant with light signal energy indicating the possibly of filtering none-monochromatic light signals. Onthe other hand imposing an ac signal between the terminals of Pb/WO3/Au devices has proofed the ability of the device to perform as low pass and as band stop filters workable in the microwave frequency domain. The microwave cutoff frequency for this device reached?9 GHz nominating it for use in 5 Gmobile technology. The current study showed that coating of tungsten oxide onto semitransparent Pb substrate and coverage small area of the top contact with Au can allen_US
dc.description.sponsorshipKing Abdulaziz Univewrsityen_US
dc.identifier.citationAlkhamisi, M. M., Qasrawi, A. F., & Khanfar, H. K. (2023). Lead-tungsten oxide interfaces designed as gigahertz/terahertz filters. Physica Scripta, 98(4) doi:10.1088/1402-4896/acc31ben_US
dc.identifier.doi10.1088/1402-4896/acc31ben_US
dc.identifier.issue4en_US
dc.identifier.scopus2-s2.0-85150814221en_US
dc.identifier.urihttps://iopscience.iop.org/article/10.1088/1402-4896/acc31b
dc.identifier.urihttps://doi.org/10.1088/1402-4896/acc31b
dc.identifier.urihttps://hdl.handle.net/20.500.12713/3897
dc.identifier.volume98en_US
dc.identifier.wosWOS:000954686500001en_US
dc.identifier.wosqualityQ2en_US
dc.indekslendigikaynakWeb of Scienceen_US
dc.indekslendigikaynakScopusen_US
dc.institutionauthorQasrawi, Atef Fayez
dc.language.isoenen_US
dc.publisherIOP Scienceen_US
dc.relation.ispartofPhysica Scriptaen_US
dc.relation.publicationcategoryMakale - Uluslararası Hakemli Dergi - Kurum Öğretim Elemanıen_US
dc.rightsinfo:eu-repo/semantics/closedAccessen_US
dc.subjectPb/WO3en_US
dc.subjectOptical Filtersen_US
dc.subjectTerahertzen_US
dc.subjectMicrowaveen_US
dc.subject5G Technologyen_US
dc.titleLead-tungsten oxide interfaces designed as gigahertz/terahertz filtersen_US
dc.typeArticleen_US

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