LaGe2 thin films designed as band filters for 6G communication technology

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Küçük Resim

Tarih

2023

Dergi Başlığı

Dergi ISSN

Cilt Başlığı

Yayıncı

Springer

Erişim Hakkı

info:eu-repo/semantics/closedAccess

Özet

Herein, LaGe2 thin films with thickness of 150 nm are grown on thin layers of indium by the thermal evaporation technique under a vacuum pressure of 10?5 mbar. The films are structurally, morphologically, compositionally and electrically characterized. It is observed that thin films of LaGe2 are polycrystalline in nature, comprising slightly excess germanium in their structure. To establish their applicability in communication technology, two In/LaGe2/Ag and In/LaGe2/C electrical channels are formed. Both of the channels performed as negative resistance and capacitance sources. The channels exhibited microwave cutoff frequency exceeding 200 GHz. The resonance in the In/LaGe2/Ag and In/LaGe2/C channels dominates at driving frequencies of 1.21 GHz and 1.42 GHz, respectively. The measured impedance, magnitude of reflection coefficient (S11 parameter), return loss and voltage standing wave ratio spectra confirmed the suitability of the LaGe2 thin films for wireless 6G communication technology.

Açıklama

Anahtar Kelimeler

LaGe2 Thin Films, Thermal Evaporation Technique, 6G Technology

Kaynak

Journal of Electronic Materials

WoS Q Değeri

Q3

Scopus Q Değeri

Q3

Cilt

Sayı

Künye

Alfhaid, L. H. K., & Qasrawi, A. F. (2023). LaGe2 Thin Films Designed as Band Filters for 6G Communication Technology. Journal of Electronic Materials, 1-9.