Effects of Amorphous Si Substrates on the Optoelectronic Properties of Zinc Phthalocyanine Thin Films

Basit Öğe Kaydı
dc.authoridAtef Fayez Qasrawi / 0000-0001-8193-6975en_US
dc.authorscopusidAtef Fayez Qasrawi / 6603962677en_US
dc.authorwosidAtef Fayez Qasrawi / R-4409-2019en_US
dc.contributor.authorQasrawi, Atef Fayez
dc.contributor.authorDaragme, Rana B.
dc.date.accessioned2024-02-22T07:35:55Z
dc.date.available2024-02-22T07:35:55Z
dc.date.issued2024en_US
dc.departmentİstinye Üniversitesi, Mühendislik ve Doğa Bilimleri Fakültesi, Elektrik-Elektronik Mühendisliği Bölümüen_US
dc.description.abstractIn the current work the effect of amorphous silicon (a-Si) substrates on the structural, optical and electrical properties of zinc phthalocyanine (ZnPc) thin films is explored. ZnPc thin films are coated onto glass and a-Si substrates by the thermal evaporation technique under a vacuum pressure of 10–5 mbar. It is observed that a-Si substrates lead to a lattice expansion, increased strain, increased stacking faults percentages and increased defect densities. Coating ZnPc films onto a-Si substrates reduced the crystallite sizes from 28 to 24 nm and decreased the energy band gap from 3.20 eV to 2.50 eV. In addition the temperature dependent electrical resistivity measurements has shown that deeper acceptor levels are formed in the energy band gap of ZnPc. Although the room temperature electrical resistivity increased by 45.5% upon coating the films onto a-Si, the light absorption in ZnPc increased by more than 24 times at 2.65 eV. The enhanced light absorption together with the shift in the energy band gap indicates that a-Si makes ZnPc films more adequate for optoelectronic applications.en_US
dc.identifier.citationQasrawi, A.F., Daragme, R.B. Effects of Amorphous Si Substrates on the Optoelectronic Properties of Zinc Phthalocyanine Thin Films. Silicon (2024). https://doi.org/10.1007/s12633-024-02850-yen_US
dc.identifier.doi10.1007/s12633-024-02850-yen_US
dc.identifier.issn1876-990Xen_US
dc.identifier.issn1876-9918en_US
dc.identifier.scopus2-s2.0-85183036070en_US
dc.identifier.scopusqualityQ2en_US
dc.identifier.urihttps://doi.org/10.1007/s12633-024-02850-y
dc.identifier.urihttps://hdl.handle.net/20.500.12713/4014
dc.identifier.wosWOS:001148780100002en_US
dc.identifier.wosqualityQ3en_US
dc.indekslendigikaynakWeb of Scienceen_US
dc.indekslendigikaynakScopusen_US
dc.institutionauthorQasrawi, Atef Fayez
dc.language.isoenen_US
dc.publisherSpringeren_US
dc.relation.ispartofSiliconen_US
dc.relation.publicationcategoryMakale - Uluslararası Hakemli Dergi - Kurum Öğretim Elemanıen_US
dc.rightsinfo:eu-repo/semantics/closedAccessen_US
dc.subjecta-Si/ZnPCen_US
dc.subjectHigh Absorbanceen_US
dc.subjectOptoelectronicsen_US
dc.subjectElectrical Resistivityen_US
dc.subjectAcceptor Levelsen_US
dc.titleEffects of Amorphous Si Substrates on the Optoelectronic Properties of Zinc Phthalocyanine Thin Filmsen_US
dc.typeArticleen_US

Dosyalar

Orijinal paket
Listeleniyor 1 - 1 / 1
Küçük Resim Yok
İsim:
300-2024-05-Si-ZnPc-(Atef, Rana ) Silicon online.pdf
Boyut:
1.66 MB
Biçim:
Adobe Portable Document Format
Açıklama:
Tam Metin / Full Text
İndir
Lisans paketi
Listeleniyor 1 - 1 / 1
Küçük Resim Yok
İsim:
license.txt
Boyut:
1.44 KB
Biçim:
Item-specific license agreed upon to submission
Açıklama:
İndir

Koleksiyon

Elektrik-Elektronik Mühendisliği Bölümü Makale Koleksiyonu
Scopus İndeksli Yayınlar Koleksiyonu
WoS İndeksli Yayınlar Koleksiyonu