Band offsets, optical conduction, photoelectric and dielectric dispersion in InSe/Sb2 Te3 heterojunctions

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dc.authoridAtef Fayez Qasrawi / 0000-0001-8193-6975en_US
dc.authorscopusidAtef Fayez Qasrawi / 6603962677
dc.authorwosidAtef Fayez Qasrawi / R-4409-2019
dc.contributor.authorAlfhaid, Latifah Hamad Khalid
dc.contributor.authorQasrawi, Atef Fayez
dc.contributor.authorAlGarni, Sabah E.
dc.date.accessioned2021-05-28T10:38:58Z
dc.date.available2021-05-28T10:38:58Z
dc.date.issued2021en_US
dc.departmentİstinye Üniversitesi, Mühendislik ve Doğa Bilimleri Fakültesi, Elektrik-Elektronik Bölümüen_US
dc.description.abstractInSe based heterojunction devices gain importance in optoelectronic applications in NIR range as multipurpose sensors. For this reason, InSe/Sb2 Te3 heterojunctions are constructed as NIR sensors by the thermal evaporation technique. The structural, optical, dielectric and photoelectric properties of InSe/Sb2 Te3 heterojunctions are explored by X-ray diffraction and ultraviolet-visible light spectrophotometry techniques. The structural analyses revealed the preferred growth of polycrystalline hexagonal Sb2 Te3 onto amorphous InSe as a major phase. Optically, the coating of Sb2 Te3 onto InSe enhanced the light absorbability of InSe by more than 18 times, redshifts the energy band gap, increased the dielectric constant by ~5 times and increased the optical conductivity by 35 times in the NIR range of light. A conduction and valance band offsets of 0.40 and 0.68 eV are determined for the InSe/Sb2 Te3 heterojunction devices. In addition, the Drude-Lorentz fittings of the optical conductivity indicated a remarkable increase in the plasmon frequency values upon depositing of Sb2 Te3 onto InSe. The illumination intensity and time dependent photocurrent measurements resulted in an enhancement in the photocurrent values by one order of magnitude. The response time of the devices is sufficiently short to nominate the InSe/Sb2 Te3 heterojunction devices as fast responding NIR sensors suitable for optoelectronic applications.en_US
dc.identifier.citationAlfhaid, Latifah Hamad Khalid, Qasrawi, A. F. and AlGarni, Sabah E.Band Offsets, Optical Conduction, Photoelectric and Dielectric Dispersion in InSe/Sb2Te3 Heterojunctions. Materials Research [online]. 2021, v. 24, n. 4 [Accessed 27 May 2021] , e20200578. Available from: <https://doi.org/10.1590/1980-5373-MR-2020-0578>. Epub 19 May 2021. ISSN 1980-5373. https://doi.org/10.1590/1980-5373-MR-2020-0578.en_US
dc.identifier.doi10.1590/1980-5373-MR-2020-0578en_US
dc.identifier.issn1980-5373en_US
dc.identifier.scopus2-s2.0-85107626639en_US
dc.identifier.scopusqualityN/Aen_US
dc.identifier.urihttps://doi.org/10.1590/1980-5373-MR-2020-0578
dc.identifier.urihttps://hdl.handle.net/20.500.12713/1764
dc.identifier.volume24en_US
dc.identifier.wosWOS:000669584200015en_US
dc.identifier.wosqualityQ4en_US
dc.indekslendigikaynakWeb of Scienceen_US
dc.indekslendigikaynakScopusen_US
dc.institutionauthorQasrawi, Atef Fayez
dc.language.isoenen_US
dc.publisherSciELOen_US
dc.relation.ispartofMATERIALS RESEARCH-IBERO-AMERICAN JOURNAL OF MATERIALSen_US
dc.relation.publicationcategoryMakale - Uluslararası Hakemli Dergi - Kurum Öğretim Elemanıen_US
dc.rightsinfo:eu-repo/semantics/openAccessen_US
dc.subjectInSe/Sb2 Te3en_US
dc.subjectDielectricen_US
dc.subjectBand Offseten_US
dc.subjectDrude-Lorentz Modelen_US
dc.titleBand offsets, optical conduction, photoelectric and dielectric dispersion in InSe/Sb2 Te3 heterojunctionsen_US
dc.typeArticleen_US

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