Yb/inse/sb2te3 /au broken gap heterojunction devices designed as current rectifiers, tunable mos capacitors and gigahertz microwave cavities
Yükleniyor...
Dosyalar
Tarih
2021
Dergi Başlığı
Dergi ISSN
Cilt Başlığı
Yayıncı
S.C. Virtual Company of Phisics S.R.L
Erişim Hakkı
info:eu-repo/semantics/closedAccess
Özet
Herein, we report the design and experimental characterization of a broken gap heterojunction devices fabricated by vacuum evaporation of Yb/InSe/Sb2Te3/Au stacked layers. The structural characterizations of the stacked layers revealed an amorphous/polycrystalline heterojunction type. The measurements of capacitance-voltage characteristics in the frequency domain of 1.0-9.0 MHz displayed tunable metal-oxide-semiconductor (MOS) characteristics. The frequency dependent built-in voltage, depletion width, and free carrier density is also investigated. In addition, the analyses of current-voltage characteristics have shown that the device displays highly stable current rectification ratios of ~103 above 0.20 V. Moreover, the ac signal analyses in the frequency domain of 10-1800 MHz have shown the possible tunability of the conductance and capacitance over a wide range of frequency. Furthermore, the microwave cutoff frequency spectra indicated increasing cutoff frequency limits with increasing incident signal frequency. The microwave cutoff frequency reached 7.1 GHz for a propagating signal of frequency of 1800 MHz.
Açıklama
Anahtar Kelimeler
Bandstop Filters, Broken Gap, InSe/Sb2Te3, Microwave Cavity, MOS Capacitors
Kaynak
Chalcogenide Letters
WoS Q Değeri
Q4
Scopus Q Değeri
Q3
Cilt
18
Sayı
3
Künye
Alfhaid, L.H.K., Qasrawi, A.F., & Algarni, S.E. (2021). Yb/InSe/Sb2Te3/Au BROKEN GAP HETEROJUNCTION DEVICES DESIGNED AS CURRENT RECTIFIERS, TUNABLE MOS CAPACITORS AND GIGAHERTZ MICROWAVE CAVITIES.
