Yb/inse/sb2te3 /au broken gap heterojunction devices designed as current rectifiers, tunable mos capacitors and gigahertz microwave cavities

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dc.authoridAtef Fayez Qasrawi / 0000-0001-8193-6975en_US
dc.authorscopusidAtef Fayez Qasrawi / 6603962677
dc.authorwosidAtef Fayez Qasrawi / R-4409-2019
dc.contributor.authorAlfhaid, Latifah Hamad Khalid
dc.contributor.authorQasrawi, Atef Fayez
dc.contributor.authorAlGarni, Sabah E.
dc.date.accessioned2021-03-31T07:15:07Z
dc.date.available2021-03-31T07:15:07Z
dc.date.issued2021en_US
dc.departmentİstinye Üniversitesi, Mühendislik ve Doğa Bilimleri Fakültesi, Elektrik-Elektronik Bölümüen_US
dc.description.abstractHerein, we report the design and experimental characterization of a broken gap heterojunction devices fabricated by vacuum evaporation of Yb/InSe/Sb2Te3/Au stacked layers. The structural characterizations of the stacked layers revealed an amorphous/polycrystalline heterojunction type. The measurements of capacitance-voltage characteristics in the frequency domain of 1.0-9.0 MHz displayed tunable metal-oxide-semiconductor (MOS) characteristics. The frequency dependent built-in voltage, depletion width, and free carrier density is also investigated. In addition, the analyses of current-voltage characteristics have shown that the device displays highly stable current rectification ratios of ~103 above 0.20 V. Moreover, the ac signal analyses in the frequency domain of 10-1800 MHz have shown the possible tunability of the conductance and capacitance over a wide range of frequency. Furthermore, the microwave cutoff frequency spectra indicated increasing cutoff frequency limits with increasing incident signal frequency. The microwave cutoff frequency reached 7.1 GHz for a propagating signal of frequency of 1800 MHz.en_US
dc.identifier.citationAlfhaid, L.H.K., Qasrawi, A.F., & Algarni, S.E. (2021). Yb/InSe/Sb2Te3/Au BROKEN GAP HETEROJUNCTION DEVICES DESIGNED AS CURRENT RECTIFIERS, TUNABLE MOS CAPACITORS AND GIGAHERTZ MICROWAVE CAVITIES.en_US
dc.identifier.endpage121en_US
dc.identifier.issn1584-8663en_US
dc.identifier.issue3en_US
dc.identifier.scopusqualityQ3en_US
dc.identifier.startpage113en_US
dc.identifier.urihttps://hdl.handle.net/20.500.12713/1642
dc.identifier.volume18en_US
dc.identifier.wosWOS:000648288700002en_US
dc.identifier.wosqualityQ4en_US
dc.indekslendigikaynakWeb of Scienceen_US
dc.indekslendigikaynakScopusen_US
dc.institutionauthorQasrawi, Atef Fayez
dc.language.isoenen_US
dc.publisherS.C. Virtual Company of Phisics S.R.Len_US
dc.relation.ispartofChalcogenide Lettersen_US
dc.relation.publicationcategoryMakale - Uluslararası Hakemli Dergi - Kurum Öğretim Elemanıen_US
dc.rightsinfo:eu-repo/semantics/closedAccessen_US
dc.subjectBandstop Filtersen_US
dc.subjectBroken Gapen_US
dc.subjectInSe/Sb2Te3en_US
dc.subjectMicrowave Cavityen_US
dc.subjectMOS Capacitorsen_US
dc.titleYb/inse/sb2te3 /au broken gap heterojunction devices designed as current rectifiers, tunable mos capacitors and gigahertz microwave cavitiesen_US
dc.typeArticleen_US

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