Growth of Polycrystalline n? CrSe2 Nanosheets Onto p –Si Substrates and their Applications as Rectifiers and Gigahertz Band Filters

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dc.authoridAtef Fayez Qasrawi / 0000-0001-8193-6975en_US
dc.authorscopusidAtef Fayez Qasrawi / 6603962677en_US
dc.authorwosidAtef Fayez Qasrawi / R-4409-2019en_US
dc.contributor.authorAlgarni, Sabah E.
dc.contributor.authorQasrawi, Atef Fayez
dc.contributor.authorKhusayfan, Najla M.
dc.date.accessioned2024-02-22T07:35:55Z
dc.date.available2024-02-22T07:35:55Z
dc.date.issued2024en_US
dc.departmentİstinye Üniversitesi, Mühendislik ve Doğa Bilimleri Fakültesi, Elektrik-Elektronik Mühendisliği Bölümüen_US
dc.description.abstracta vacuum evaporation technique under a vacuum pressure of 10– 5 mbar. Experimental and theoretical structural investigations have shown the preferred growth of trigonal CrSe2. The unit cell parameters being a = b = 3.520 Å,c = 5.889 Å and P3m1(164) fits well with the standards of trigonal CrSe2 structure. Nanosheets of chromium selenide displayed low defect density of the order of 1010 lines/cm2 along the a? and b axes. Surface morphology studies have shown that CrSe2 nanosheets is composed of spherical grains of average sizes of 200 nm. Optically the interfacing of the n– type CrSe2 nanosheets with p? type Si results in formation of a conduction and valence band offsets of 0.95 eV and 0.47 eV, respectively. These band offsets were found sufficient to allow running the Si/CrSe2 interfaces as pn junction devices. The devices displayed a biasing dependent rectification ratios (asymmetry). The ratios which reached value of 70 can be varied with the applied voltage. Deep analyses of the current transport mechanism of these rectifiers have shown the domination by thermionic and tunneling mechanisms under forward and reverse biasing conditions, respectively. Moreover the pn junction device showed features of band filters with cutoff frequency values suiting gigahertz technology making the device attractive for multifunction operations.en_US
dc.identifier.citationAlgarni, S. E., Qasrawi, A. F., & Khusayfan, N. M. (2024). Growth of Polycrystalline n-CrSe2 Nanosheets Onto p–Si Substrates and their Applications as Rectifiers and Gigahertz Band Filters. Silicon, 1-8.en_US
dc.identifier.doi10.1007/s12633-023-02842-4en_US
dc.identifier.issn1876-990Xen_US
dc.identifier.scopus2-s2.0-85181677109en_US
dc.identifier.scopusqualityQ2en_US
dc.identifier.urihttps://doi.org/10.1007/s12633-023-02842-4
dc.identifier.urihttps://hdl.handle.net/20.500.12713/4010
dc.identifier.wosWOS:001137623600002en_US
dc.identifier.wosqualityQ3en_US
dc.indekslendigikaynakWeb of Scienceen_US
dc.indekslendigikaynakScopusen_US
dc.institutionauthorQasrawi, Atef Fayez
dc.language.isoenen_US
dc.publisherSpringeren_US
dc.relation.ispartofSiliconen_US
dc.relation.publicationcategoryMakale - Uluslararası Hakemli Dergi - Kurum Öğretim Elemanıen_US
dc.rightsinfo:eu-repo/semantics/closedAccessen_US
dc.subjectSi/CrSeen_US
dc.subjectTrigonalen_US
dc.subjectBand Offsetsen_US
dc.subjectRectifiersen_US
dc.subjectGigahertz Technologyen_US
dc.titleGrowth of Polycrystalline n? CrSe2 Nanosheets Onto p –Si Substrates and their Applications as Rectifiers and Gigahertz Band Filtersen_US
dc.typeArticleen_US

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