Performance of Pt/CRSe schottky diodes designed for 5G/6G technology applications
Yükleniyor...
Tarih
2024
Dergi Başlığı
Dergi ISSN
Cilt Başlığı
Yayıncı
Virtual Co. Physics SRL
Erişim Hakkı
info:eu-repo/semantics/openAccess
Özet
Herein thin films of CrSe deposited by the thermal evaporation technique onto Pt substrates are designed as Schottky diodes. It is observed that the Pt/CrSe/C (PCC) Schottky diodes are of tunneling type showing barrier height and widths of 0.56 eV and 18 nm, respectively. These diodes displayed biasing dependent nonlinearity and negative slope of differential resistance. The analyses of the cutoff frequency spectra indicated that PCC devices can exhibit high cutoff frequency up to 17 GHz based on the driving signal frequency. The features of the PCC devices make it promising as electronic component suitable for 5G/6G technology applications.
Açıklama
Anahtar Kelimeler
Pt/CrSe, Tunneling barriers, Microwaves, Cutoff frequency, 6G technology, Pt/CrSe, Tunneling Barriers, Microwaves, Cutoff Frequency, 6G Technology
Kaynak
Journal of Ovonic Research
WoS Q Değeri
Q4
Scopus Q Değeri
N/A
Cilt
20
Sayı
1
Künye
Qasrawi, A., & Alfhaid, L. (2024). Performance of PT/CRSE Schottky diodes designed for 5G/6G technology applications.
