Performance of Pt/CRSe schottky diodes designed for 5G/6G technology applications

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dc.authoridAtef Fayez Qasrawi / 0000-0001-8193-6975en_US
dc.authorscopusidAtef Fayez Qasrawi / 6603962677en_US
dc.authorwosidAtef Fayez Qasrawi / R-4409-2019en_US
dc.contributor.authorAlfhaid, Latifah Hamad Khalid
dc.contributor.authorQasrawi, Atef Fayez
dc.date.accessioned2024-02-22T07:35:55Z
dc.date.available2024-02-22T07:35:55Z
dc.date.issued2024en_US
dc.departmentİstinye Üniversitesi, Mühendislik ve Doğa Bilimleri Fakültesi, Elektrik-Elektronik Mühendisliği Bölümüen_US
dc.description.abstractHerein thin films of CrSe deposited by the thermal evaporation technique onto Pt substrates are designed as Schottky diodes. It is observed that the Pt/CrSe/C (PCC) Schottky diodes are of tunneling type showing barrier height and widths of 0.56 eV and 18 nm, respectively. These diodes displayed biasing dependent nonlinearity and negative slope of differential resistance. The analyses of the cutoff frequency spectra indicated that PCC devices can exhibit high cutoff frequency up to 17 GHz based on the driving signal frequency. The features of the PCC devices make it promising as electronic component suitable for 5G/6G technology applications.en_US
dc.identifier.citationQasrawi, A., & Alfhaid, L. (2024). Performance of PT/CRSE Schottky diodes designed for 5G/6G technology applications.en_US
dc.identifier.doi10.15251/JOR.2024.201.65en_US
dc.identifier.endpage74en_US
dc.identifier.issn1584 - 9953en_US
dc.identifier.issue1en_US
dc.identifier.scopus2-s2.0-85183339084en_US
dc.identifier.scopusqualityN/Aen_US
dc.identifier.startpage65en_US
dc.identifier.urihttps://doi.org/10.15251/JOR.2024.201.65
dc.identifier.urihttps://hdl.handle.net/20.500.12713/4012
dc.identifier.volume20en_US
dc.identifier.wosWOS:001148755200003en_US
dc.identifier.wosqualityQ4en_US
dc.indekslendigikaynakWeb of Scienceen_US
dc.indekslendigikaynakScopusen_US
dc.institutionauthorQasrawi, Atef Fayez
dc.language.isoenen_US
dc.publisherVirtual Co. Physics SRLen_US
dc.relation.ispartofJournal of Ovonic Researchen_US
dc.relation.publicationcategoryMakale - Uluslararası Hakemli Dergi - Kurum Öğretim Elemanıen_US
dc.rightsinfo:eu-repo/semantics/openAccessen_US
dc.subjectPt/CrSe, Tunneling barriers, Microwaves, Cutoff frequency, 6G technologyen_US
dc.subjectPt/CrSeen_US
dc.subjectTunneling Barriersen_US
dc.subjectMicrowavesen_US
dc.subjectCutoff Frequencyen_US
dc.subject6G Technologyen_US
dc.titlePerformance of Pt/CRSe schottky diodes designed for 5G/6G technology applicationsen_US
dc.typeArticleen_US

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