Voltage and frequency controlled Ge/SeO2 thin film transistors designed as rectifiers, negative capacitance and negative conductance sources
Yükleniyor...
Tarih
2023
Yazarlar
Dergi Başlığı
Dergi ISSN
Cilt Başlığı
Yayıncı
Virtual Co. Physics SRL.
Erişim Hakkı
info:eu-repo/semantics/openAccess
Özet
Herein voltage and frequency controlled thin film transistors fabricated by depositing SeO2 onto germanium thin crystals are reported. For these devices measurements of the current-voltage characteristics revealed a biasing dependent rectification ratios. The devices showed metal-oxide-semiconductor character under reverse biasing conditions. In addition, the biasing dependent capacitance and conductance spectral studies in the frequency domain of 20M-1000MHz has shown the possibility of switching the capacitance and negative conductance from negative mode to positive mode. The features of the Ge/SeO2 devices make them attractive for use in electronic circuits as parasitic capacitive circuit elements, noise reducers, signal amplifiers and microwave oscillators.
Açıklama
Anahtar Kelimeler
Ag/Ge/SeO2/Ag, X-ray, MOS, Negative Conductance, Negative Capacitance
Kaynak
Chalcogenide Letters
WoS Q Değeri
Q4
Scopus Q Değeri
Q3
Cilt
20
Sayı
3
Künye
Qasrawi, A. F., & Khanfar, H. K. (2023). Voltage and frequency controlled Ge/SeO2 thin film transistors designed as rectifiers, negative capacitance and negative conductance sources. Chalcogenide Letters, 20(3), 177-186. doi:10.15251/CL.2023.203.177
