Voltage and frequency controlled Ge/SeO2 thin film transistors designed as rectifiers, negative capacitance and negative conductance sources

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dc.authoridAtef Fayez Qasrawi / 0000-0001-8193-6975en_US
dc.authorscopusidAtef Fayez Qasrawi / 6603962677en_US
dc.authorwosidAtef Fayez Qasrawi / R-4409-2019en_US
dc.contributor.authorQasrawi, Atef Fayez
dc.contributor.authorKhanfar, Hazem K.
dc.date.accessioned2023-04-12T13:32:47Z
dc.date.available2023-04-12T13:32:47Z
dc.date.issued2023en_US
dc.departmentİstinye Üniversitesi, Mühendislik ve Doğa Bilimleri Fakültesi, Elektrik-Elektronik Mühendisliği Bölümüen_US
dc.description.abstractHerein voltage and frequency controlled thin film transistors fabricated by depositing SeO2 onto germanium thin crystals are reported. For these devices measurements of the current-voltage characteristics revealed a biasing dependent rectification ratios. The devices showed metal-oxide-semiconductor character under reverse biasing conditions. In addition, the biasing dependent capacitance and conductance spectral studies in the frequency domain of 20M-1000MHz has shown the possibility of switching the capacitance and negative conductance from negative mode to positive mode. The features of the Ge/SeO2 devices make them attractive for use in electronic circuits as parasitic capacitive circuit elements, noise reducers, signal amplifiers and microwave oscillators.en_US
dc.identifier.citationQasrawi, A. F., & Khanfar, H. K. (2023). Voltage and frequency controlled Ge/SeO2 thin film transistors designed as rectifiers, negative capacitance and negative conductance sources. Chalcogenide Letters, 20(3), 177-186. doi:10.15251/CL.2023.203.177en_US
dc.identifier.doi10.15251/CL.2023.203.177en_US
dc.identifier.endpage186en_US
dc.identifier.issn1584-8663en_US
dc.identifier.issue3en_US
dc.identifier.scopus2-s2.0-85150461322en_US
dc.identifier.scopusqualityQ3en_US
dc.identifier.startpage177en_US
dc.identifier.urihttps://doi.org/10.15251/CL.2023.203.177
dc.identifier.urihttps://hdl.handle.net/20.500.12713/3896
dc.identifier.volume20en_US
dc.identifier.wosWOS:000954282900001en_US
dc.identifier.wosqualityQ4en_US
dc.indekslendigikaynakWeb of Scienceen_US
dc.indekslendigikaynakScopusen_US
dc.institutionauthorQasrawi, Atef Fayez
dc.language.isoenen_US
dc.publisherVirtual Co. Physics SRL.en_US
dc.relation.ispartofChalcogenide Lettersen_US
dc.relation.publicationcategoryMakale - Uluslararası Hakemli Dergi - Kurum Öğretim Elemanıen_US
dc.rightsinfo:eu-repo/semantics/openAccessen_US
dc.subjectAg/Ge/SeO2/Agen_US
dc.subjectX-rayen_US
dc.subjectMOSen_US
dc.subjectNegative Conductanceen_US
dc.subjectNegative Capacitanceen_US
dc.titleVoltage and frequency controlled Ge/SeO2 thin film transistors designed as rectifiers, negative capacitance and negative conductance sourcesen_US
dc.typeArticleen_US

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